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Hot Electrons and Hot Spins at Metal–Organic Interfaces
Author(s) -
Arnold Thorsten,
Atxabal Ainhoa,
Parui Subir,
Hueso Luis E.,
Ortmann Frank
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201706105
Subject(s) - spin diffusion , materials science , spin (aerodynamics) , electron , spinplasmonics , condensed matter physics , spins , diffusion , organic semiconductor , hot electron , spin polarization , charge (physics) , spin hall effect , optoelectronics , physics , thermodynamics , ferromagnetism , quantum mechanics
A model is developed to describe the electron transport properties of hot electron devices based on organic semiconductors. For the first time, the simulations cover all the different processes the carriers experience in the device, which allows disentangling various effects on the transport characteristics. The model is compared to experimental measurements and excellent agreement is found. In addition, the model includes the electron spin and is thus able to describe a hot spin transistor. In this device, a spatial variation of the spin diffusion length is found, which scales inversely proportional to the variation of the electron density. The spin current can be increased by increasing the hot electron energy and by decreasing the image charge barrier without changing the spin diffusion length. Unprecedented insight into the effect of interfacial disorder at the metal–organic interface on charge and spin transport is provided. Finally, conditions are established, where majority and minority spin carriers propagate in opposite directions, increasing the spin current relative to the charge current and the occurrence of pure spin currents is analyzed.