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Ultrathin Lutetium Oxide Film as an Epitaxial Hole‐Blocking Layer for Crystalline Bismuth Vanadate Water Splitting Photoanodes
Author(s) -
Zhang Wenrui,
Yan Danhua,
Tong Xiao,
Liu Mingzhao
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201705512
Subject(s) - materials science , heterojunction , bismuth vanadate , epitaxy , optoelectronics , photocurrent , lutetium , pulsed laser deposition , bismuth , oxide , atomic layer deposition , nanotechnology , thin film , layer (electronics) , photocatalysis , chemistry , yttrium , metallurgy , catalysis , biochemistry
Here a novel ultrathin lutetium oxide (Lu 2 O 3 ) interlayer is integrated with crystalline bismuth vanadate (BiVO 4 ) thin film photoanodes to facilitate carrier transport through atomic‐scale interface control. The epitaxial Lu 2 O 3 interlayer fabricated by pulsed laser deposition features very few structural defects at the back contact of the heterojunction, and forms a unique band alignment that favors photohole blocking. An optimized interlayer thickness of 1.4 nm significantly enhances charge separation efficiency and photocurrent. Combined with photoelectrochemical characterization, solid‐state electronic, and localized conductive atomic force microscopy measurements, it is revealed that the Lu 2 O 3 interlayer modulates the electronic conduction pathways along structural grain boundaries and determines the overall device performance. This study sheds light on the nature of interface‐engineered carrier transport for efficient photoelectrode heterostructure design.