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Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications
Author(s) -
Wang Zhongrui,
Rao Mingyi,
Midya Rivu,
Joshi Saumil,
Jiang Hao,
Lin Peng,
Song Wenhao,
Asapu Shiva,
Zhuo Ye,
Li Can,
Wu Huaqiang,
Xia Qiangfei,
Yang J. Joshua
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201704862
Subject(s) - neuromorphic engineering , materials science , memristor , dielectric , conductance , thermal conduction , relaxation (psychology) , nanotechnology , resistive random access memory , electronics , chemical physics , biasing , optoelectronics , voltage , condensed matter physics , electronic engineering , electrical engineering , physics , computer science , artificial neural network , psychology , social psychology , machine learning , engineering , composite material
Threshold switches with Ag or Cu active metal species are volatile memristors (also termed diffusive memristors) featuring spontaneous rupture of conduction channels. The temporal dynamics of the conductance evolution is closely related to the electrochemical and diffusive dynamics of the active metals which could be modulated by electric field strength, biasing duration, temperature, and so on. Microscopic pictures by electron microscopy and quantitative thermodynamics modeling are examined to give insights into the underlying physics of the switching. Depending on the time scale of the relaxation process, such devices find a variety of novel applications in electronics, ranging from selector devices for memories to synaptic devices for neuromorphic computing.