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Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub‐Glass Transition Temperature
Author(s) -
Georgiou Vasileia,
Veksler Dmitry,
Ryan Jason T.,
Campbell Jason P.,
Shrestha Pragya R.,
Ioannou Dimitris E.,
Cheung Kin P.
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201704165
Subject(s) - materials science , annealing (glass) , ferroelectricity , glass transition , polar , dielectric , polymer , hysteresis , transistor , thin film , condensed matter physics , optoelectronics , leakage (economics) , voltage , nanotechnology , composite material , electrical engineering , physics , engineering , astronomy , economics , macroeconomics
An unexpected rapid anneal of electrically active defects in an ultrathin (15.5 nm) polar polyimide film at and below glass transition temperature ( T g ) is reported. The polar polymer is the gate dielectric of a thin‐film‐transistor. Gate leakage current density ( J g ) through the polymer initially increases with temperature, as expected, but decreases rapidly at T g − 60 °C. After ≈2 min at T g , the leakage is reduced by nearly three orders of magnitude. A concomitant observation is that the drain current ( I d )–gate voltage ( V g ) hysteresis decreases with temperature, reaching zero at nearly the same temperature at which J g collapses. As J g drops further, the drain current hysteresis increases again but in the opposite direction. This combination strongly supports the interpretation of rapid defect annealing.