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Space‐Confined Chemical Vapor Deposition Synthesis of Ultrathin HfS 2 Flakes for Optoelectronic Application
Author(s) -
Yan Chaoyi,
Gan Lin,
Zhou Xing,
Guo Jun,
Huang Wenjuan,
Huang Jianwen,
Jin Bao,
Xiong Jie,
Zhai Tianyou,
Li Yanrong
Publication year - 2017
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201702918
Subject(s) - materials science , chemical vapor deposition , substrate (aquarium) , deposition (geology) , atomic layer deposition , nanotechnology , nanoelectronics , quartz , optoelectronics , bilayer , transition metal , mica , metalorganic vapour phase epitaxy , layer (electronics) , epitaxy , composite material , catalysis , paleontology , biochemistry , oceanography , genetics , chemistry , sediment , membrane , biology , geology
Due to the predicted excellent electronic properties superior to group VIB (Mo and W) transition metal dichalcogenides (TMDs), group IVB TMDs have enormous potential in nanoelectronics. Here, the synthesis of ultrathin HfS 2 flakes via space‐confined chemical vapor deposition, realized by an inner quartz tube, is demonstrated. Moreover, the effect of key growth parameters including the dimensions of confined space and deposition temperature on the growth behavior of products is systematically studied. Typical as‐synthesized HfS 2 is a hexagonal‐like flake with a smallest thickness of ≈1.2 nm (bilayer) and an edge size of ≈5 µm. The photodetector based on as‐synthesized HfS 2 flakes demonstrates excellent optoelectronic performance with a fast photoresponse time (55 ms), which is attributed to the high‐quality crystal structure obtained at a high deposition temperature and the ultraclean interface between HfS 2 and the mica substrate. With such properties HfS 2 holds great potential for optoelectronics applications.