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Solution‐Growth Strategy for Large‐Scale “CuGaO 2 Nanoplate/ZnS Microsphere” Heterostructure Arrays with Enhanced UV Adsorption and Optoelectronic Properties
Author(s) -
Li Yanmei,
Song Yun,
Jiang Yingchang,
Hu Mingxiang,
Pan Zhichang,
Xu Xiaojie,
Chen Hongyu,
Li Yuesheng,
Hu Linfeng,
Fang Xiaosheng
Publication year - 2017
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201701066
Subject(s) - materials science , heterojunction , ostwald ripening , delafossite , nanotechnology , nanostructure , optoelectronics , crystallite , chemical engineering , band gap , engineering , metallurgy , oxide
Intrinsically p‐type conductivity and a wide bandgap of ≈3.6 V endow inorganic delafossite CuGaO 2 with great promise for fabricating high‐performance UV photodetectors. Nevertheless, CuGaO 2 ‐based optoelectronic devices hindered because the intrinsic direct transitions are symmetry forbidden in CuGaO 2 . This study reports a large‐area synthesis of “CuGaO 2 nanoplate/ZnS microsphere” heterostructure arrays using a facile solution‐based strategy associated with an oil/water interfacial self‐assembly approach. It is found that a large number of ZnS microspheres with a polycrystalline structure grow on the top surface of CuGaO 2 hexagonal platelets through Ostwald ripening mechanism, forming high‐density p–n heterojunctions. A parabolic dependence between the size of ZnS microsphere and the growth time is confirmed in this growth. The UV light adsorption of the heterostructure CuGaO 2 /ZnS thin film is two times higher than that of the pristine CuGaO 2 thin film. Furthermore, the as‐designed “CuGaO 2 nanoplate/ZnS microsphere” heterostructure arrays exhibit enhanced photoresponse properties. This work offers a new insight into the rational design of optoelectronic devices from the synergetic effect of p‐type 2D nanoplates as well as n‐type nanostructures such as ZnS, ZnO, CdS, and CdO.