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Highly Robust Bendable Oxide Thin‐Film Transistors on Polyimide Substrates via Mesh and Strip Patterning of Device Layers
Author(s) -
Lee Suhui,
Jeong Daun,
Mativenga Mallory,
Jang Jin
Publication year - 2017
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201700437
Subject(s) - materials science , thin film transistor , bend radius , optoelectronics , polyimide , transistor , bending , electrode , semiconductor , layer (electronics) , substrate (aquarium) , composite material , electrical engineering , chemistry , voltage , engineering , oceanography , geology
Advancement in thin‐film transistor (TFT) technologies has extended to applications that can withstand extreme bending or folding. The changes of the performances of amorphous‐indium‐gallium‐zinc‐oxide (a‐IGZO) TFTs on polyimide substrate after application of extreme mechanical bending strain are studied. The TFT designs include mesh and strip patterned source/drain metal lines as well as strip patterned a‐IGZO semiconductor layer. The robustness of the a‐IGZO TFTs with the strain of 2.17% corresponding to the radius of 0.32 mm is tested and no crack generation even after 60 000 bending cycles is found. The split of source/drain electrodes and semiconductor layer can improve the mechanical bending stability of the TFTs. This can be possible by using conventional TFT manufacturing process so that this technology can be easily applied to build robust TFT array for foldable displays.