Premium
Cu Diffusion‐Driven Dynamic Modulation of the Electrical Properties of Amorphous Oxide Semiconductors
Author(s) -
Yeon HanWool,
Jo Janghyun,
Song Hochul,
Kang Youngho,
Na Sekwon,
Yoo Hyobin,
Lee SeungYong,
Cho Haelim,
Kang HoYoung,
Jung JungKyu,
Han Seungwu,
Kim Miyoung,
Joo YoungChang
Publication year - 2017
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201700336
Subject(s) - materials science , amorphous solid , annealing (glass) , semiconductor , electrical resistivity and conductivity , oxide , diffusion , chemical physics , crystallography , optoelectronics , composite material , metallurgy , thermodynamics , electrical engineering , chemistry , physics , engineering
The exact role of Cu in the electrical properties of amorphous oxide semiconductors (AOSs) has been unclear, even though Cu has been the key element for the p‐type characteristics of crystalline oxide semiconductors. Here, the dynamic changes, determined by diffusion kinetics, in the effect of Cu on the electrical properties of amorphous InGaZnO (a‐IGZO) are revealed. In the early stage of annealing, Cu dominantly diffuses into a‐IGZO through the free volume and acts as a mobile electron donor, which generates a resistive switching (RS) behavior related to the conductive filaments (CFs). With further annealing, substitutional Cu becomes predominant via In sites. After annealing, supersaturated Cu forms nonuniform, crystalline CuInO clusters in a‐IGZO, which decrease the electrical conductivity of a‐IGZO and deteriorate the CF‐based RS performance. The findings reveal Cu diffusion mechanisms and the role of Cu in the electrical properties of AOSs dependent on the structural location and provide guidelines for modulating the RS characteristics of AOSs through Cu diffusion control.