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An Ultrahigh Responsivity (9.7 mA W −1 ) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga 2 O 3 Heterostructures
Author(s) -
Zhao Bin,
Wang Fei,
Chen Hongyu,
Zheng Lingxia,
Su Longxing,
Zhao Dongxu,
Fang Xiaosheng
Publication year - 2017
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201700264
Subject(s) - responsivity , photodetector , heterojunction , materials science , optoelectronics , chemical vapor deposition , wavelength , optics , physics
Highly crystallized ZnO–Ga 2 O 3 core–shell heterostructure microwire is synthesized by a simple one‐step chemical vapor deposition method, and constructed into a self‐powered solar‐blind (200–280 nm) photodetector with a sharp cutoff wavelength at 266 nm. The device shows an ultrahigh responsivity (9.7 mA W −1 ) at 251 nm with a high UV/visible rejection ratio ( R 251 nm / R 400 nm ) of 6.9 × 10 2 under zero bias. The self‐powered device has a fast response speed with rise time shorter than 100 µs and decay time of 900 µs, respectively. The ultrahigh responsivity, high UV/visible rejection ratio, and fast response speed make it highly suitable in practical self‐powered solar‐blind detection. Additinoally, this microstructure heterojunction design method would provide a new approach to realize the high‐performance self‐powered photodetectors.