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Memristive Devices: Conductive Graphitic Channel in Graphene Oxide‐Based Memristive Devices (Adv. Funct. Mater. 41/2016)
Author(s) -
Kim Sung Kyu,
Kim Jong Yoon,
Jang Byung Chul,
Cho Mi Sun,
Choi SungYool,
Lee Jeong Yong,
Jeong Hu Young
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201670272
Subject(s) - graphene , materials science , oxide , memristor , nanotechnology , electrical conductor , graphene oxide paper , transparent conducting film , optoelectronics , thin film , electrical engineering , composite material , metallurgy , engineering
On page 7406, S.‐Y. Choi, J. Y. Lee, H. Y. Jeong, and co‐workers report on the direct observation of conductive graphitic channels formed in the graphene oxide thin films used for the graphene‐oxide based memristors. The observed high reduction of graphene oxide films by the strong electric field will be useful for the development of carbon‐based electronics.