Premium
Organic Electronics: Toward High‐Output Organic Vertical Field Effect Transistors: Key Design Parameters (Adv. Funct. Mater. 38/2016)
Author(s) -
Kwon Hyukyun,
Kim Mincheol,
Cho Hyunsu,
Moon Hanul,
Lee Jongjin,
Yoo Seunghyup
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201670252
Subject(s) - materials science , organic field effect transistor , transistor , field effect transistor , organic electronics , optoelectronics , channel (broadcasting) , electronics , field (mathematics) , nanotechnology , electrical engineering , computer science , telecommunications , voltage , mathematics , pure mathematics , engineering
In order to overcome the performance limitation of conventional lateral‐channel organic field‐effect transistor (OFET) structures, vertical field‐effect transistors (VFETs) have recently been investigated. On page 6888, H. Moon, J. Lee, S. Yoo, and co‐workers present an organic vertical field‐effect transistor with key design parameters to enhance device performance. These results show better performance than lateral‐channel OFETs in terms of driving capability.