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Oxide Transistors: Metal Oxide Transistors via Polyethylenimine Doping of the Channel Layer: Interplay of Doping, Microstructure, and Charge Transport (Adv. Funct. Mater. 34/2016)
Author(s) -
Huang Wei,
Zeng Li,
Yu Xinge,
Guo Peijun,
Wang Binghao,
Ma Qing,
Chang Robert P. H.,
Yu Junsheng,
Bedzyk Michael J.,
Marks Tobin J.,
Facchetti Antonio
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201670223
Subject(s) - materials science , polyethylenimine , doping , oxide , microstructure , transistor , thin film transistor , optoelectronics , metal , layer (electronics) , nanotechnology , voltage , composite material , electrical engineering , metallurgy , biology , cell culture , transfection , genetics , engineering
Enhanced metal oxide (In 2 O 3 , IZO, IGZO) transistor performance via polyethylenimine (PEI) doping is demonstrated by J. Yu, M. J. Bedzyk, T. J. Marks, A. Fachetti, and co‐workers on page 6179. PEI electron donating capacity combined with charge trapping and variation in the matrix film microstructure contribute, for proper PEI doping levels, to high electron mobility, optimal TFT off‐currents, and optimal threshold voltages. This concept is promising for opto‐electronic devices based on metal oxide films.