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Multilevel Memory: Plasmonic‐Radiation‐Enhanced Metal Oxide Nanowire Heterojunctions for Controllable Multilevel Memory (Adv. Funct. Mater. 33/2016)
Author(s) -
Lin Luchan,
Liu Lei,
Musselman Kevin,
Zou Guisheng,
Duley Walt W.,
Zhou Y. Norman
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201670215
Subject(s) - materials science , memristor , nanowire , plasmon , heterojunction , nanotechnology , oxide , optoelectronics , femtosecond , laser , optics , electronic engineering , metallurgy , physics , engineering
On page 5979, L. Liu, Y. N. Zhou, and co‐workers report on the use of highly localized, femtosecond‐laser‐induced plasmons for modifying metal‐oxide nanowire junctions for memristor devices. Selective modification of memristor units results in an engineered electrical interface with minimal damage to the bridged nanowires. This scalable and flexible methods shows promise for developing multilevel memory applications.