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Implatantable Devices: Resistive Switching Memory Integrated with Nanogenerator for Self‐Powered Bioimplantable Devices (Adv. Funct. Mater. 29/2016)
Author(s) -
Kim BoYun,
Lee WoongHee,
Hwang HyunGyu,
Kim DongHa,
Kim JeongHun,
Lee SangHoon,
Nahm Sahn
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201670184
Subject(s) - resistive random access memory , nanogenerator , materials science , piezoelectricity , optoelectronics , resistive touchscreen , nanotechnology , electrical engineering , voltage , composite material , engineering
On page 5211, S. Nahm and co‐workers present a resistive random access memory (ReRAM) driven by a piezoelectric nanogenerator (NG). Biocompatible (Na 0.5 K 0.5 )NbO 3 lead‐free piezoelectric thin films were used for both ReRAM and NG. The NKN ReRAM powered by NKN NG shows a stable memory performance, which can be applied to various advanced self‐powered biomedical systems.