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Semiconductor Blends: Fullerene Additives Convert Ambipolar Transport to p‐Type Transport while Improving the Operational Stability of Organic Thin Film Transistors (Adv. Funct. Mater. 25/2016)
Author(s) -
Ford Michael J.,
Wang Ming,
Phan Hung,
Nguyen ThucQuyen,
Bazan Guillermo C.
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201670161
Subject(s) - ambipolar diffusion , materials science , fullerene , organic semiconductor , transistor , semiconductor , thin film transistor , optoelectronics , polymer , nanotechnology , electron transport chain , charge carrier , voltage , electron , composite material , organic chemistry , electrical engineering , chemistry , physics , layer (electronics) , quantum mechanics , engineering , botany , biology
G. C. Bazan and co‐workers have discovered a novel solution‐processable method for controlling charge transport properties in ambipolar semiconductors. As described on page 4472, electron conduction is effectively eliminated by addition of fullerenes. Fullerene additives also suppress transistor variations during bias‐stress. Stable current‐voltage characteristics with mobilities exceeding 5 cm 2 V −1 s −1 for uniaxially aligned polymers were achieved.