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Thin Film Transistors: High‐Performance Flexible Multilayer MoS 2 Transistors on Solution‐Based Polyimide Substrates (Adv. Funct. Mater. 15/2016)
Author(s) -
Song Won Geun,
Kwon HyukJun,
Park Jozeph,
Yeo Junyeob,
Kim Minjeong,
Park Suntak,
Yun Sungryul,
Kyung KiUk,
Grigoropoulos Costas P.,
Kim Sunkook,
Hong Young Ki
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201670090
Subject(s) - materials science , molybdenum disulfide , polyimide , transistor , thin film transistor , optoelectronics , flexible electronics , fabrication , nanotechnology , thin film , layer (electronics) , composite material , electrical engineering , medicine , alternative medicine , engineering , pathology , voltage
On page 2426, C. P. Grigoropoulos, S. Kim, Y. K. Hong, and co‐workers demonstrate a novel process architecture for flexible electronics. The multilayer molybdenum disulfide thin‐film transistor array fabricated according to this scheme exhibits not only outstanding device performances, but also no apparent degradation under various mechanical stresses. These results could provide important applications in the fabrication of flexible integrated circuitry for various versatile functions.