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Electrical Characteristics: High—Performance Solar‐Blind Deep Ultraviolet Photodetector Based on Individual Single‐Crystalline Zn 2 GeO 4 Nanowire (Adv. Funct. Mater. 5/2016)
Author(s) -
Zhou Xing,
Zhang Qi,
Gan Lin,
Li Xin,
Li Huiqiao,
Zhang Yue,
Golberg Dmitri,
Zhai Tianyou
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201670033
Subject(s) - responsivity , materials science , photodetector , optoelectronics , ultraviolet , quantum efficiency
On page 704, T. Y. Zhai and co‐workers prepare high‐performance solar‐blind DUV photodetectors based on individual CVD‐fabricated Zn 2 GeO 4 nanowire and perform in‐depth analysis of their optoelectronic characteristics. The device demonstrates outstanding solar‐blind light sensing performance with a high responsivity, a high external quantum efficiency, and a fast response speed.