Electrical Characteristics: High—Performance Solar‐Blind Deep Ultraviolet Photodetector Based on Individual Single‐Crystalline Zn 2 GeO 4  Nanowire (Adv. Funct. Mater. 5/2016) | Zendy

Zhou Xing | Zendy; Zhang Qi | Zendy; Gan Lin | Zendy; Li Xin | Zendy; Li Huiqiao | Zendy; Zhang Yue | Zendy; Golberg Dmitri | Zendy; Zhai Tianyou | Zendy

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Electrical Characteristics: High—Performance Solar‐Blind Deep Ultraviolet Photodetector Based on Individual Single‐Crystalline Zn 2 GeO 4 Nanowire (Adv. Funct. Mater. 5/2016)

Author(s) -

Zhou Xing,

Zhang Qi,

Gan Lin,

Li Xin,

Li Huiqiao,

Zhang Yue,

Golberg Dmitri,

Zhai Tianyou

Publication year - 2016

Publication title -

advanced functional materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 6.069

H-Index - 322

eISSN - 1616-3028

pISSN - 1616-301X

DOI - 10.1002/adfm.201670033

Subject(s) - responsivity , materials science , photodetector , optoelectronics , ultraviolet , quantum efficiency

On page 704, T. Y. Zhai and co‐workers prepare high‐performance solar‐blind DUV photodetectors based on individual CVD‐fabricated Zn 2 GeO 4 nanowire and perform in‐depth analysis of their optoelectronic characteristics. The device demonstrates outstanding solar‐blind light sensing performance with a high responsivity, a high external quantum efficiency, and a fast response speed.

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