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Exploring the Leidenfrost Effect for the Deposition of High‐Quality In 2 O 3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors
Author(s) -
Isakov Ivan,
Faber Hendrik,
Grell Max,
WyattMoon Gwenhivir,
Pliatsikas Nikos,
Kehagias Thomas,
Dimitrakopulos George P.,
Patsalas Panos P.,
Li Ruipeng,
Anthopoulos Thomas D.
Publication year - 2017
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201606407
Subject(s) - materials science , leidenfrost effect , thin film transistor , substrate (aquarium) , indium , oxide , chemical engineering , thin film , boiling , electron mobility , deposition (geology) , nanotechnology , optoelectronics , metallurgy , nucleate boiling , thermodynamics , layer (electronics) , physics , oceanography , sediment , geology , biology , engineering , heat transfer , paleontology , heat transfer coefficient
The growth mechanism of indium oxide (In 2 O 3 ) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100–300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate's surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline In 2 O 3 layers via a vapor phase‐like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of In 2 O 3 are grown over large area substrates at temperatures as low as 252 °C. Thin‐film transistors (TFTs) fabricated using these optimized In 2 O 3 layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm 2 V −1 s −1 , a value amongst the highest reported to date for solution‐processed In 2 O 3 TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large‐volume manufacturing of high‐performance metal oxide thin‐film transistor electronics.