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Conception of Stretchable Resistive Memory Devices Based on Nanostructure‐Controlled Carbohydrate‐ block ‐Polyisoprene Block Copolymers
Author(s) -
Hung ChihChien,
Chiu YuCheng,
Wu HungChin,
Lu Chien,
Bouilhac Cécile,
Otsuka Issei,
Halila Sami,
Borsali Redouane,
Tung ShihHuang,
Chen WenChang
Publication year - 2017
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201606161
Subject(s) - materials science , polydimethylsiloxane , copolymer , nanostructure , cylinder , nanotechnology , thin film , resistive random access memory , resistive touchscreen , layer (electronics) , block (permutation group theory) , stretchable electronics , composite material , optoelectronics , electrode , computer science , polymer , electrical engineering , mechanical engineering , chemistry , geometry , mathematics , engineering , computer vision , electronics
It is discovered that the memory‐type behaviors of novel carbohydrate‐ block ‐polyisoprene (MH‐ b ‐PI) block copolymers‐based devices, including write‐once‐read‐many‐times, Flash, and dynamic‐random‐access‐memory, can be easily controlled by the self‐assembly nanostructures (vertical cylinder, horizontal cylinder, and order‐packed sphere), in which the MH and PI blocks, respectively, provide the charge‐trapping and stretchable function. With increasing the flexible PI block length, the stretchability of the designed copolymers can be significantly improved up to 100% without forming cracks. Thus, intrinsically stretchable resistive memory devices (polydimethylsiloxane(PDMS)/carbon nanotubes(CNTs)/MH‐ b ‐PI thin film/Al) using the MH‐ b ‐PI thin film as an active layer is successfully fabricated and that using the MH‐ b ‐PI 12.6k under 100% strain exhibits an excellent ON/OFF current ratio of over 10 6 (reading at −1 V) with stable V set around −2 V. Furthermore, the endurance characteristics can be maintained over 500 cycles upon 40% strain. This work establishes and represents a novel avenue for the design of green carbohydrate‐derived and stretchable memory materials.