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Textile Resistance Switching Memory for Fabric Electronics
Author(s) -
Jo Anjae,
Seo Youngdae,
Ko Museok,
Kim Chaewon,
Kim Heejoo,
Nam Seungjin,
Choi Hyunjoo,
Hwang Cheol Seong,
Lee Mi Jung
Publication year - 2017
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201605593
Subject(s) - materials science , wearable technology , electronics , layer (electronics) , electrode , textile , optoelectronics , wearable computer , electrical resistance and conductance , fiber type , nanotechnology , composite material , fiber , electrical engineering , computer science , embedded system , chemistry , engineering
A new type of wearable electronic device, called a textile memory, is reported. This is created by combining the unique properties of Al‐coated threads with a native layer of Al 2 O 3 as a resistance switching layer, and carbon fiber as the counter‐electrode, which induces a fluent redox reaction at the interface under a small electrical bias (typically 2–3 V). These two materials can be embroidered into an existing cloth or woven into a novel cloth. The electrical resistance of the contacts is repeatedly switched by the bias polarity, as observed in the recently highlighted resistance switching memory. The devices with different structure from the solid metal‐insulator‐metal devices show reliable resistance switching behaviors in textile form by single stitch and in array as well that would render this new type of material system applicable to a broad range of emerging wearable devices. Such behavior cannot be achieved in other material choices, revealing the uniqueness of this material system.