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Synergistic Effect of Hybrid PbS Quantum Dots/2D‐WSe 2 Toward High Performance and Broadband Phototransistors
Author(s) -
Hu Chao,
Dong Dongdong,
Yang Xiaokun,
Qiao Keke,
Yang Dun,
Deng Hui,
Yuan Shengjie,
Khan Jahangeer,
Lan Yang,
Song Haisheng,
Tang Jiang
Publication year - 2017
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201603605
Subject(s) - photodetection , materials science , responsivity , optoelectronics , photodiode , quantum dot , specific detectivity , photodetector , broadband , nanotechnology , optics , physics
The transitionmetal dichalcogenides‐based phototransistors have demonstrated high transport mobility but are limited to poor photoresponse, which greatly blocks their applications in optoelectronic fields. Here, light sensitive PbS colloidal quantum dots (QDs) combined with 2D WSe 2 to develop hybrid QDs/2D‐WSe 2 phototransistors for high performance and broadband photodetection are utilized. The device shows a responsivity up to 2 × 10 5 A W –1 , which is orders of magnitude higher than the counterpart of individual material‐based devices. The detection spectra of hybrid devices can be extended to near infrared similar to QDs' response. The high performance of hybrid 0D‐2D phototransistor is ascribed to the synergistic function of photogating effect. PbS QDs can efficiently absorb the input illumination and 2D WSe 2 supports a transport expressway for injected photocarriers. The hybrid phototransistors obtain a specific detectivity over 10 13 Jones in both ON and OFF state in contrast to the depleted working state (OFF) for other reported QDs/2D phototransistors. The present device construction strategy, photogating enhanced performance, and robust device working conditions contain high potential for future optoelectronic devices.