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Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO 2
Author(s) -
Pešić Milan,
Hoffmann Michael,
Richter Claudia,
Mikolajick Thomas,
Schroeder Uwe
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201603182
Subject(s) - materials science , antiferroelectricity , non volatile memory , capacitor , hysteresis , optoelectronics , energy storage , ferroelectricity , voltage , electrical engineering , condensed matter physics , power (physics) , physics , quantum mechanics , dielectric , engineering
To date antiferroelectrics have not been considered as nonvolatile memory elements because a removal of the external field causes a depolarization, resulting in a loss of the stored information. In comparison to ferroelectrics, antiferroelectrics are known for their enhanced fatigue resistance. Therefore, the main scope of this study is the development of a new memory device concept that would enable the usage of antiferroelectrics as a nonvolatile material with improved wake‐up and enhanced endurance properties. Recent studies have shown antiferroelectric behavior in ZrO 2 , a material that is widely used in semiconductor industry, especially in dynamic random access memories. The basis of the new concept is the antiferroelectric hysteresis combined with the use of different workfunction electrodes that induce an internal bias field. Utilizing this approach, the field cycling endurance is drastically improved. Combining a comprehensive material study and electrical trap spectroscopy together with Landau–Ginzburg–Devonshire formalism, a proof of concept for a novel antiferroelectric random access memory is presented. For implementing a nonvolatile random access memory, the capacitors have to be realized in a 3D integrated version. These 3D integrated ZrO 2 capacitors can be used as energy storage devices as well, showing record high energy storage density and very high energy efficiency values.