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Imprinting of Local Metallic States into VO 2 with Ultraviolet Light
Author(s) -
Zhang HaiTian,
Guo Lu,
Stone Greg,
Zhang Lei,
Zheng YuanXia,
Freeman Eugene,
Keefer Derek W.,
Chaudhuri Subhasis,
Paik Hanjong,
Moyer Jarrett A.,
Barth Michael,
Schlom Darrell G.,
Badding John V.,
Datta Suman,
Gopalan Venkatraman,
EngelHerbert Roman
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201601890
Subject(s) - materials science , ultraviolet , optoelectronics , electrical conductor , ultraviolet light , plasmon , metal , photonics , nanotechnology , composite material , metallurgy
Materials exhibiting electronic phase transitions have attracted widespread attention. By switching between metallic and insulating states under external stimuli, the accompanying changes in the electrical and optical properties can be harnessed in novel electronic and optical applications. In this work, a laterally confined conductive pattern is inscribed into an otherwise insulating VO 2 thin film using ultraviolet light, inducing an almost four orders of magnitude decrease in electrical resistivity of the exposed area. The metallic imprint remains in VO 2 after ultraviolet light exposure and can be completely erased by a short low temperature anneal. The ability to optically pattern confined metallic structures provides new opportunities for reconfigurable photonic and plasmonic structures, as well as re‐writable electric circuitry.