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Ultrafast Plasmonic Hot Electron Transfer in Au Nanoantenna/MoS 2 Heterostructures
Author(s) -
Yu Ying,
Ji Ziheng,
Zu Shuai,
Du Bowen,
Kang Yimin,
Li Ziwei,
Zhou Zhangkai,
Shi Kebin,
Fang Zheyu
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201601779
Subject(s) - materials science , heterojunction , plasmon , optoelectronics , femtosecond , semiconductor , ultrashort pulse , exciton , photodetection , photoluminescence , band gap , spectroscopy , laser , photodetector , optics , physics , quantum mechanics
2D transition metal dichalcogenides are becoming attractive materials for novel photoelectric and photovoltaic applications due to their excellent optoelectric properties and accessible optical bandgap in the near‐infrared to visible range. Devices utilizing 2D materials integrated with metal nanostructures have recently emerged as efficient schemes for hot electron‐based photodetection. Metal‐semiconductor heterostructures with low cost, simple procedure, and fast response time are crucial for the practical applications of optoelectric devices. In this paper, template‐based sputtering method is used first to fabricate Au nanoantenna (NA)/MoS 2 heterostructures with low cost, simple preparation, broad spectral response, and fast response time. Through the measurement of femtosecond pump‐probe spectroscopy, it is demonstrated that plasmon‐induced hot electron transfer takes place in the Au NA/MoS 2 heterostructure on the order of 200 fs with an injected electron density of about 5.6 × 10 12 cm −2 . Moreover, the pump‐power‐dependent photoluminescence spectra confirm that the exciton energy of MoS 2 can be enhanced, coupled, and reradiated by the Au NA. Such ultrafast plasmon‐induced hot electron transfer in the metal‐semiconductor heterostructure can enable novel 2D devices for light harvesting and photoelectric conversion.