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Configuration‐Dependent Electrically Tunable Van der Waals Heterostructures Based on MoTe 2 /MoS 2
Author(s) -
Wang Feng,
Yin Lei,
Wang Zhen Xing,
Xu Kai,
Wang Feng Mei,
Shifa Tofik Ahmed,
Huang Yun,
Jiang Chao,
He Jun
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201601349
Subject(s) - materials science , stacking , heterojunction , rectification , van der waals force , optoelectronics , voltage , nanotechnology , electrical engineering , physics , molecule , nuclear magnetic resonance , quantum mechanics , engineering
Van der Waals heterostructures (vdWHs), obtained by artificially stacking 2D layered material (2DLM) plains upon each other, are brand new structures that have exhibited novel electronic and optoelectronic properties and attracted a great deal of attention. So far, the results are only based on devices with symmetrical configurations: devices predominated by vdWH parts, or cross‐like configurations combined with both vdWHs and extra individual 2DLM layers. Quite different gate tunable phenomena have been observed for these two configurations even though 2DLMs with similar band alignments were used, which may be due to the different device configurations utilized. For a deeper understanding, rational investigation on configuration‐dependent properties of vdWHs is needed. Here, using MoTe 2 /MoS 2 as an example, vdWH device is artificially designed with two asymmetrical configurations. Through comparing the respective results, it is found that the properties that stem only from the vdWH, i.e., the rectification behavior and open voltage in photovoltaic effect, are independent of the device structures. However, other properties, i.e., drain currents, short circuit currents, and photoreponse performances, strongly depend on the configuration used. These results give a guideline on studying the intrinsic properties of vdWHs and optimizing the device structures for better performances.