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High‐Sensitivity Floating‐Gate Phototransistors Based on WS 2 and MoS 2
Author(s) -
Gong Fan,
Luo Wenjin,
Wang Jianlu,
Wang Peng,
Fang Hehai,
Zheng Dingshan,
Guo Nan,
Wang Jingli,
Luo Man,
Ho Johnny C.,
Chen Xiaoshuang,
Lu Wei,
Liao Lei,
Hu Weida
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201601346
Subject(s) - materials science , optoelectronics , dark current , heterojunction , high κ dielectric , dielectric , absorption (acoustics) , quantum tunnelling , sensitivity (control systems) , photodetector , electronic engineering , engineering , composite material
In recent years, 2D layered materials have been considered as promising photon absorption channel media for next‐generation phototransistors due to their atomic thickness, easily tailored single‐crystal van der Waals heterostructures, ultrafast optoelectronic characteristics, and broadband photon absorption. However, the photosensitivity obtained from such devices, even under a large bias voltage, is still unsatisfactory until now. In this paper, high‐sensitivity phototransistors based on WS 2 and MoS 2 are proposed, designed, and fabricated with gold nanoparticles (AuNPs) embedded in the gate dielectric. These AuNPs, located between the tunneling and blocking dielectric, are found to enable efficient electron trapping in order to strongly suppress dark current. Ultralow dark current (10 −11 A), high photoresponsivity (1090 A W −1 ), and high detectivity (3.5 × 10 11 Jones) are obtained for the WS 2 devices under a low source/drain and a zero gate voltage at a wavelength of 520 nm. These results demonstrate that the floating‐gate memory structure is an effective configuration to achieve high‐performance 2D electronic/optoelectronic devices.