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In‐Plane Self‐Turning and Twin Dynamics Renders Large Stretchability to Mono‐Like Zigzag Silicon Nanowire Springs
Author(s) -
Xue Zhaoguo,
Xu Mingkun,
Li Xing,
Wang Jimmy,
Jiang Xiaofan,
Wei Xianlong,
Yu Linwei,
Chen Qing,
Wang Junzhuan,
Xu Jun,
Shi Yi,
Chen Kunji,
Roca i Cabarrocas Pere
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201600780
Subject(s) - zigzag , materials science , nanotechnology , nanowire , silicon , crystallography , composite material , optoelectronics , geometry , chemistry , mathematics
Crystalline Si nanowire (SiNW) springs, produced via a low temperature (<350 °C) thin film technology, are ideal building blocks for stretchable electronics. Herein, a novel cyclic crystallographic‐index‐lowering self‐turning and twin dynamics is reported, during a tin‐catalyzed in‐plane growth of SiNWs, which results in a periodic zigzag SiNW without any external parametric intervention. More interestingly, a unique twin‐reflected interlaced crystal‐domain structure has been identified for the first time, while in situ and real‐time scanning electron microscopy observations reveal a new twin‐triggering growth mechanism that is the key to reset a complete zigzag growth cycle. Direct “stress–strain” testing of the SiNW springs demonstrates a large stretchability of 12% under tensile loading, indicating a whole new strategy and capability to engineer mono‐like SiNW channels for high performance stretchable electronics.