High‐Speed and Low‐Energy Nitride Memristors | Zendy

Choi Byung Joon | Zendy; Torrezan Antonio C. | Zendy; Strachan John Paul | Zendy; Kotula P. G. | Zendy; Lohn A. J. | Zendy; Marinella Matthew J. | Zendy; Li Zhiyong | Zendy; Williams R. Stanley | Zendy; Yang J. Joshua | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Premium

High‐Speed and Low‐Energy Nitride Memristors

Author(s) -

Choi Byung Joon,

Torrezan Antonio C.,

Strachan John Paul,

Kotula P. G.,

Lohn A. J.,

Marinella Matthew J.,

Li Zhiyong,

Williams R. Stanley,

Yang J. Joshua

Publication year - 2016

Publication title -

advanced functional materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 6.069

H-Index - 322

eISSN - 1616-3028

pISSN - 1616-301X

DOI - 10.1002/adfm.201600680

Subject(s) - materials science , memristor , nitride , optoelectronics , ultrashort pulse , thermal conduction , switching time , energy (signal processing) , channel (broadcasting) , layer (electronics) , nanotechnology , electronic engineering , composite material , electrical engineering , optics , statistics , mathematics , engineering , laser , physics

High‐performance memristors based on AlN films have been demonstrated, which exhibit ultrafast ON/OFF switching times (≈85 ps for microdevices with waveguide) and relatively low switching current (≈15 μA for 50 nm devices). Physical characterizations are carried out to understand the device switching mechanism, and rationalize speed and energy performance. The formation of an Al‐rich conduction channel through the AlN layer is revealed. The motion of positively charged nitrogen vacancies is likely responsible for the observed switching.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research