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Large‐Size Growth of Ultrathin SnS 2 Nanosheets and High Performance for Phototransistors
Author(s) -
Zhou Xing,
Zhang Qi,
Gan Lin,
Li Huiqiao,
Zhai Tianyou
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201600318
Subject(s) - nanosheet , responsivity , materials science , photodetector , optoelectronics , chemical vapor deposition , nanotechnology , deposition (geology) , paleontology , sediment , biology
2D SnS 2 nanosheets have been attracting intensive attention as one potential candidate for the modern electronic and/or optoelectronic fields. However, the controllable large‐size growth of ultrathin SnS 2 nanosheets still remains a great challenge and the photodetectors based on SnS 2 nanosheets suffer from low responsivity, thus hindering their further applications so far. Herein, an improved chemical vapor deposition route is provided to synthesize large‐size SnS 2 nanosheets, the side length of which can surpass 150 μm. Then, ultrathin SnS 2 nanosheet‐based phototransistors are fabricated, which achieve high photoresponsivities up to 261 A W −1 (with a fast rising time of 20 ms and a falling time of 16 ms) in air and 722 A W −1 in vacuum, respectively. Furthermore, the effects of back‐gate voltage and air adsorbates on the optoelectronic properties of the SnS 2 nanosheet have been systematically investigated. In addition, a high‐performance flexible photodetector based on SnS 2 nanosheet is also fabricated with a high responsivity of 34.6 A W −1 .