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Beryllium‐Assisted p‐Type Doping for ZnO Homojunction Light‐Emitting Devices
Author(s) -
Chen Anqi,
Zhu Hai,
Wu Yanyan,
Chen Mingming,
Zhu Yuan,
Gui Xuchun,
Tang Zikang
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201600163
Subject(s) - homojunction , materials science , doping , optoelectronics , beryllium , diode , light emitting diode , p–n junction , ultraviolet , realization (probability) , nanotechnology , semiconductor , statistics , physics , mathematics , nuclear physics
A key step in realization of a ZnO homojunction light‐emitting diode is the effective p‐type doping in ZnO:N. In this article, a feasible route is demonstrated to enhance hole doping in ZnO:N films by the assistance of Beryllium. The newly synthesized p‐type ZnO is applied in light‐emitting devices. The corresponding p–i–n junction exhibits excellent diode characteristics, and strong near band edge ultraviolet emissions is also observed even at temperatures as high as 400 K under the injection of continuous current. The results represent a critical advance toward the development of high‐efficiency and stabilized p‐type ZnO, which is also a desirable key step for future ZnO‐based optoelectronic applications.