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Metal Based Nonvolatile Field‐Effect Transistors
Author(s) -
Bi Chong,
Xu Meng,
Almasi Hamid,
Rosales Macus,
Wang Weigang
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201600048
Subject(s) - materials science , field effect transistor , redox , metal , electrochemistry , oxide , transistor , electric field , non volatile memory , optoelectronics , nanotechnology , electrode , electrical engineering , voltage , metallurgy , chemistry , physics , quantum mechanics , engineering
The reduction of metals from their oxides through solid electrochemical reactions usually requires a high temperature above 800 °C and a specially designed electrochemical structure. It is demonstrated that, in a simple field‐effect transistor (FET) structure, the redox reaction between Co metal and CoO x is reversible under a small electric field and can be achieved at a moderate temperature below 200 °C. The FETs functioning through the reversible redox reaction show nonvolatile behavior and a high on/off ratio of about 10 5 . Moreover, the FETs show a threshold resistance switching behavior at high resistance states, but with opposite switching directions compared to normal metal/oxide/metal structures. The electric field induced metal–oxide transition may also be used for other energy storage applications.