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Graphene Oxide Memory: Direct Observation of Conducting Nanofilaments in Graphene‐Oxide‐Resistive Switching Memory (Adv. Funct. Mater. 43/2015)
Author(s) -
Kim Sung Kyu,
Kim Jong Yoon,
Choi SungYool,
Lee Jeong Yong,
Jeong Hu Young
Publication year - 2015
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201570276
Subject(s) - graphene , materials science , oxide , amorphous solid , resistive random access memory , layer (electronics) , resistive touchscreen , graphene oxide paper , nanotechnology , optoelectronics , metal , electrode , computer science , crystallography , metallurgy , chemistry , computer vision
Al metallic filaments are directly observed in the amorphous top interface layer in Al/graphene oxide (GO)/Al resistive switching memory devices. S.‐Y. Choi, J. Y. Lee, H. Y. Jeong, and co‐workers also demonstrate, on page 6710, that the oxygen functional groups of graphene oxide are the key elements to explain interface‐dominant switching models in GO‐based resistive memory.