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Special Issue: Resistively Switching Chalcogenides (Adv. Funct. Mater. 40/2015)
Publication year - 2015
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201570260
Subject(s) - materials science , nanotechnology , amorphous solid , cover (algebra) , fast switching , optoelectronics , engineering physics , physics , chemistry , crystallography , quantum mechanics , mechanical engineering , voltage , engineering
In contrast to traditional electronics, in which atomic‐level configuration changes degrade performance, resistive switching processes in metal oxides and higher chalcogenides rely on changes in the atomic configuration for their essential functionality. This Special Issue covers various types of resistive switching phenomena, from crystalline–amorphous phase change effects in higher chalcogenides, to nanoionic redox effects in metal oxides.