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Memory Devices: Configurable Resistive Switching between Memory and Threshold Characteristics for Protein‐Based Devices (Adv. Funct. Mater. 25/2015)
Author(s) -
Wang Hong,
Du Yuanmin,
Li Yingtao,
Zhu Bowen,
Leow Wan Ru,
Li Yuangang,
Pan Jisheng,
Wu Tao,
Chen Xiaodong
Publication year - 2015
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201570172
Subject(s) - materials science , biocompatible material , resistive touchscreen , silk , optoelectronics , nanotechnology , resistive random access memory , non volatile memory , bar (unit) , computer science , electrical engineering , biomedical engineering , composite material , operating system , voltage , engineering , physics , meteorology
Resistive switching (RS) devices with configurable functionality based on silk protein are demonstrated by T. Wu, X. Chen, and co‐workers on page 3825. The types of RS can be effectively and exactly controlled between memory and threshold. The results suggest that silk protein has great potential in cross‐bar array applications for biocompatible and environmentally friendly high density data storage.