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Energy Barriers: Gate‐Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction (Adv. Funct. Mater. 20/2015)
Author(s) -
Parui Subir,
Pietrobon Luca,
Ciudad David,
Vélez Saül,
Sun Xiangnan,
Casanova Fèlix,
Stoliar Pablo,
Hueso Luis E.
Publication year - 2015
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201570137
Subject(s) - materials science , graphene , semiconductor , optoelectronics , transistor , nanotechnology , field effect transistor , organic semiconductor , voltage , electrical engineering , engineering
Graphene is an ideal candidate for the source electrode in a vertical organic field effect transistor as it has low density of states near the Dirac point and easy gate tunability of the Fermi‐level. On page 2972, S. Parui, L. Hueso, and team modulate the energy barrier at a graphene/molecular semiconductor (fullerene) junction by varying the gate electric field, thus opening a promising route toward molecular‐semiconductor based devices.
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