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Batteries: High Performance 3D Si/Ge Nanorods Array Anode Buffered by TiN/Ti Interlayer for Sodium‐Ion Batteries (Adv. Funct. Mater. 9/2015)
Author(s) -
Yue Chuang,
Yu Yingjian,
Sun Shibo,
He Xu,
Chen Binbin,
Lin Wei,
Xu Binbin,
Zheng Mingsen,
Wu Suntao,
Li Jing,
Kang Junyong,
Lin Liwei
Publication year - 2015
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201570064
Subject(s) - materials science , anode , nanorod , tin , wafer , electrode , optoelectronics , nanotechnology , ion , composite number , hexagonal crystal system , sodium , composite material , metallurgy , crystallography , chemistry , physics , quantum mechanics
On page 1386, J. Li and co‐workers present 3D hexagonal Si/TiN/Ti/Ge NR arrays as anodes in sodium‐ion batteries (SIBs) with high reversible areal/specific capacity and superior cycling stability even imposed by high current densities. This kind of unique wafer‐scale 3D Si‐based composite electrode portends a promising future for lab‐on‐chip micro/nanoSIBs with practical applications in integrated circuit systems, micro/nanoelectro mechanical systems, or other smart electronic devices.