Batteries: High Performance 3D Si/Ge Nanorods Array Anode Buffered by TiN/Ti Interlayer for Sodium‐Ion Batteries (Adv. Funct. Mater. 9/2015) | Zendy

Yue Chuang | Zendy; Yu Yingjian | Zendy; Sun Shibo | Zendy; He Xu | Zendy; Chen Binbin | Zendy; Lin Wei | Zendy; Xu Binbin | Zendy; Zheng Mingsen | Zendy; Wu Suntao | Zendy; Li Jing | Zendy; Kang Junyong | Zendy; Lin Liwei | Zendy

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Batteries: High Performance 3D Si/Ge Nanorods Array Anode Buffered by TiN/Ti Interlayer for Sodium‐Ion Batteries (Adv. Funct. Mater. 9/2015)

Author(s) -

Yue Chuang,

Yu Yingjian,

Sun Shibo,

He Xu,

Chen Binbin,

Lin Wei,

Xu Binbin,

Zheng Mingsen,

Wu Suntao,

Li Jing,

Kang Junyong,

Lin Liwei

Publication year - 2015

Publication title -

advanced functional materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 6.069

H-Index - 322

eISSN - 1616-3028

pISSN - 1616-301X

DOI - 10.1002/adfm.201570064

Subject(s) - materials science , anode , nanorod , tin , wafer , electrode , optoelectronics , nanotechnology , ion , composite number , hexagonal crystal system , sodium , composite material , metallurgy , crystallography , chemistry , physics , quantum mechanics

On page 1386, J. Li and co‐workers present 3D hexagonal Si/TiN/Ti/Ge NR arrays as anodes in sodium‐ion batteries (SIBs) with high reversible areal/specific capacity and superior cycling stability even imposed by high current densities. This kind of unique wafer‐scale 3D Si‐based composite electrode portends a promising future for lab‐on‐chip micro/nanoSIBs with practical applications in integrated circuit systems, micro/nanoelectro mechanical systems, or other smart electronic devices.

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