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Ionic Liquid Activation of Amorphous Metal‐Oxide Semiconductors for Flexible Transparent Electronic Devices
Author(s) -
Pudasaini Pushpa Raj,
Noh Joo Hyon,
Wong Anthony T.,
Ovchinnikova Olga S.,
Haglund Amanda V.,
Dai Sheng,
Ward Thomas Zac,
Mandrus David,
Rack Philip D.
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201505274
Subject(s) - materials science , thin film transistor , amorphous solid , semiconductor , optoelectronics , flexible electronics , field effect transistor , oxide , nanotechnology , ionic bonding , transistor , indium tin oxide , thin film , layer (electronics) , voltage , electrical engineering , ion , chemistry , organic chemistry , engineering , metallurgy , physics , quantum mechanics
Amorphous metal‐oxide semiconductors offer the high carrier mobilities and excellent large‐area uniformity required for high performance, transparent, flexible electronic devices; however, a critical bottleneck to their widespread implementation is the need to activate these materials at high temperatures which are not compatible with flexible polymer substrates. The highly controllable activation of amorphous indium gallium zinc oxide semiconductor channels using ionic liquid gating at room temperature is reported. Activation is controlled by electric field‐induced oxygen migration across the ionic liquid‐semiconductor interface. In addition to activation of unannealed devices, it is shown that threshold voltages of a transistor can be linearly tuned between the enhancement and depletion modes. Finally, the first ever example of transparent flexible thin film metal oxide transistor on a polyamide substrate created using this simple technique is demonstrated. This study demonstrates the potential of field‐induced activation as a promising alternative to traditional postdeposition thermal annealing which opens the door to wide scale implementation into flexible electronic applications.