Domain Selectivity in BiFeO 3 Thin Films by Modified Substrate Termination

Ferroelectric domain formation is an essential feature in ferroelectric thin films. These domains and domain walls can be manipulated depending on the growth conditions. In rhombohedral BiFeO 3 thin films, the ordering of the domains and the presence of specific types of domain walls play a crucial role in attaining unique ferroelectric and magnetic properties. In this study, controlled ordering of domains in BiFeO 3 film is presented, as well as a controlled selectivity between two types of domain walls is presented, i.e., 71° and 109°, by modifying the substrate termination. The experiments on two different substrates, namely SrTiO 3 and TbScO 3 , strongly indicate that the domain selectivity is determined by the growth kinetics of the initial BiFeO 3 layers.