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Domain Selectivity in BiFeO 3 Thin Films by Modified Substrate Termination
Author(s) -
Solmaz Alim,
Huijben Mark,
Koster Gertjan,
Egoavil Ricardo,
Gauquelin Nicolas,
Van Tendeloo Gustaaf,
Verbeeck Jo,
Noheda Beatriz,
Rijnders Guus
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201505065
Subject(s) - materials science , ferroelectricity , selectivity , thin film , substrate (aquarium) , domain (mathematical analysis) , condensed matter physics , nanotechnology , optoelectronics , catalysis , physics , dielectric , mathematical analysis , chemistry , oceanography , mathematics , geology , biochemistry
Ferroelectric domain formation is an essential feature in ferroelectric thin films. These domains and domain walls can be manipulated depending on the growth conditions. In rhombohedral BiFeO 3 thin films, the ordering of the domains and the presence of specific types of domain walls play a crucial role in attaining unique ferroelectric and magnetic properties. In this study, controlled ordering of domains in BiFeO 3 film is presented, as well as a controlled selectivity between two types of domain walls is presented, i.e., 71° and 109°, by modifying the substrate termination. The experiments on two different substrates, namely SrTiO 3 and TbScO 3 , strongly indicate that the domain selectivity is determined by the growth kinetics of the initial BiFeO 3 layers.