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Graphene Doping Improved Device Performance of ZnMgO/PbS Colloidal Quantum Dot Photovoltaics
Author(s) -
Hu Long,
Li DengBing,
Gao Liang,
Tan Hua,
Chen Chao,
Li Kanghua,
Li Min,
Han JunBo,
Song Haisheng,
Liu Huan,
Tang Jiang
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201505043
Subject(s) - materials science , graphene , quantum dot , lead sulfide , optoelectronics , doping , nanotechnology , photovoltaics , open circuit voltage , photovoltaic system , voltage , ecology , physics , quantum mechanics , biology
Lead sulfide (PbS) colloidal quantum dots (CQDs) solar cells possess the advantages of absorption into the infrared, solution processing, and multiple exciton generation, making them very competitive as a low‐cost photovoltaic alternative. Employing an n‐i‐p ZnO/tetrabutylammonium (TBAI)–PbS/ethanedithiol (EDT)–PbS device configuration, the present study reports a 9.0% photovoltaic device through ZnMgO electrode engineering and graphene doping. Sol–gel‐derived Zn 0.9 Mg 0.1 O buffer layer shows better transparency and higher conduction band maximum than ZnO, and incorporation of graphene and chlorinated graphene oxide into the TBAI–PbS and EDT–PbS layer respectively boosts carrier collection, leading to device with significantly enhanced open circuit voltage and short‐circuit current density. It is believed that incorporation of graphene into PbS CQD film as proposed here, and more generally nanosheets of other materials, would potentially open a simple and powerful avenue to overcome the carrier transport bottleneck of CQD optoelectronic device, thus pushing device performance to a new level.