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High‐Performance Flexible Multilayer MoS 2 Transistors on Solution‐Based Polyimide Substrates
Author(s) -
Song Won Geun,
Kwon HyukJun,
Park Jozeph,
Yeo Junyeob,
Kim Minjeong,
Park Suntak,
Yun Sungryul,
Kyung KiUk,
Grigoropoulos Costas P.,
Kim Sunkook,
Hong Young Ki
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201505019
Subject(s) - materials science , polyimide , flexible electronics , transistor , molybdenum disulfide , optoelectronics , wafer , substrate (aquarium) , bend radius , flexible display , fabrication , nanotechnology , field effect transistor , electron mobility , bending , thin film transistor , composite material , layer (electronics) , electrical engineering , medicine , oceanography , alternative medicine , engineering , pathology , voltage , geology
Transition metal dichalcogenides (TMDs) layers of molecular thickness, in particular molybdenum disulfide (MoS 2 ), become increasingly important as active elements for mechanically flexible/stretchable electronics owing to their relatively high carrier mobility, wide bandgap, and mechanical flexibility. Although the superior electronic properties of TMD transistors are usually integrated into rigid silicon wafers or glass substrates, the achievement of similar device performance on flexible substrates remains quite a challenge. The present work successfully addresses this challenge by a novel process architecture consisting of a solution‐based polyimide (PI) flexible substrate in which laser‐welded silver nanowires are embedded, a hybrid organic/inorganic gate insulator, and multilayers of MoS 2 . Transistors fabricated according to this process scheme have decent properties: a field‐effect‐mobility as high as 141 cm 2 V −1 s −1 and an I on / I off ratio as high as 5 × 10 5 . Furthermore, no apparent degradation in the device properties is observed under systematic cyclic bending tests with bending radii of 10 and 5 mm. Overall electrical and mechanical results provide potentially important applications in the fabrication of versatile areas of flexible integrated circuitry.