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Manipulation of Electric Field Effect by Orbital Switch
Author(s) -
Cui Bin,
Song Cheng,
Mao Haijun,
Yan Yinuo,
Li Fan,
Gao Shuang,
Peng Jingjing,
Zeng Fei,
Pan Feng
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201504036
Subject(s) - microelectronics , materials science , electric field , heterojunction , miniaturization , ferroelectricity , semiconductor , optoelectronics , condensed matter physics , nanotechnology , physics , dielectric , quantum mechanics
The semiconductor industry has seen a remarkable miniaturization trend, where the size of microelectronic circuit components is expected to reach the scale of atom even subatom. Here, an orbital switch formed at the interface between BaTiO 3 (BTO) and La 0.5 Sr 0.5 MnO 3 (LSMO) is used to manipulate the electric field effect in the LSMO/BTO heterostructure. The orbital switch is based on the connection or breakdown of interfacial Ti–O–Mn bond due to the ferroelectric displacement under external electric field. This finding would pave the way for the tuning of the material performance or device operation at atomic level and introducing the orbital degree of freedom into the terrain of microelectronics.