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20.0% Efficiency Si Nano/Microstructures Based Solar Cells with Excellent Broadband Spectral Response
Author(s) -
Huang Zengguang,
Song Xiaomin,
Zhong Sihua,
Xu Haiyuan,
Luo Wenxing,
Zhu Xudong,
Shen Wenzhong
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201503553
Subject(s) - materials science , passivation , wafer , optoelectronics , stack (abstract data type) , common emitter , solar cell , broadband , short circuit , wavelength , silicon , microstructure , optics , voltage , nanotechnology , layer (electronics) , electrical engineering , composite material , physics , engineering , computer science , programming language
Spectral response of solar cells determines the output performance of the devices. In this work, a 20.0% efficient silicon (Si) nano/microstructures (N/M‐Strus) based solar cell with a standard solar wafer size of 156 × 156 mm 2 (pseudo‐square) has been successfully fabricated, by employing the simultaneous stack SiO 2 /SiN x passivation for the front N/M‐Strus based n + ‐emitter and the rear surface. The key to success lies in the excellent broadband spectral responses combining the improved short‐wavelength response of the stack SiO 2 /SiN x passivated Si N/M‐Strus based n + ‐emitter with the extraordinary long‐wavelength response of the stack SiO 2 /SiN x passivated rear reflector. Benefiting from the broadband spectral response, the highest open‐circuit voltage ( V oc ) and short‐circuit current density ( J sc ) reach up to 0.653 V and 39.0 mA cm −2 , respectively. This high‐performance screen‐printed Si N/M‐Strus based solar cell has shown a very promising way to the commercial mass production of the Si based high‐efficient solar cells.