Premium
Rational Design of Small Molecules to Implement Organic Quaternary Memory Devices
Author(s) -
Zhang Qijian,
He Jinghui,
Zhuang Hao,
Li Hua,
Li Najun,
Xu Qingfeng,
Chen Dongyun,
Lu Jianmei
Publication year - 2016
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201503493
Subject(s) - ternary operation , materials science , molecule , computer data storage , organic molecules , small molecule , voltage , acceptor , non volatile memory , nanotechnology , binary number , optoelectronics , computer science , computer hardware , electrical engineering , organic chemistry , condensed matter physics , chemistry , biochemistry , physics , arithmetic , mathematics , programming language , engineering
Organic small‐molecule‐based devices with multilevel electroresistive memory behaviors have attracted more and more attentions due to their super‐high data‐storage density. However, up to now, only ternary memory molecules have been reported, and ternary storage devices may not be compatible with the binary computing systems perfectly. In this work, a donor–acceptor structured molecule containing three electron acceptors is rationally designed and the field‐induced charge‐transfer processes can occur from the donors. Organic quaternary memory devices based on this molecule are successfully demonstrated for the first time. The switching threshold voltages of the memory device are –2.04, –2.73, and –3.96 V, and the current ratio of the “0,” “1,” “2,” and “3” states is 1:10 1.78 :10 3.47 :10 5.36 , which indicate a low possibility of read and write errors. The results represent a further step in organic high‐density data‐storage devices and will inspire the further study in this field.