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High‐Performance, Air‐Stable, Top‐Gate, p‐Channel WSe 2 Field‐Effect Transistor with Fluoropolymer Buffer Layer
Author(s) -
Shokouh Seyed Hossein Hosseini,
Jeon Pyo Jin,
Pezeshki Atiye,
Choi Kyunghee,
Lee Hee Sung,
Kim Jin Sung,
Park Eun Young,
Im Seongil
Publication year - 2015
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201502008
Subject(s) - materials science , gate dielectric , optoelectronics , dielectric , high κ dielectric , transistor , field effect transistor , gate oxide , substrate (aquarium) , fabrication , layer (electronics) , fluoropolymer , bilayer , nanotechnology , voltage , electrical engineering , composite material , medicine , oceanography , alternative medicine , pathology , membrane , geology , biology , genetics , engineering , polymer
High‐performance, air‐stable, p‐channel WSe 2 top‐gate field‐effect transistors (FETs) using a bilayer gate dielectric composed of high‐ and low‐ k dielectrics are reported. Using only a high‐k Al 2 O 3 as the top‐gate dielectric generally degrades the electrical properties of p‐channel WSe 2 , therefore, a thin fluoropolymer (Cytop) as a buffer layer to protect the 2D channel from high‐ k oxide forming is deposited. As a result, a top‐gate‐patterned 2D WSe 2 FET is realized. The top‐gate p‐channel WSe 2 FET demonstrates a high hole mobility of 100 cm 2 V −1 s −1 and a I ON / I OFF ratio > 10 7 at low gate voltages ( V GS ca. −4 V) and a drain voltage ( V DS ) of −1 V on a glass substrate. Furthermore, the top‐gate FET shows a very good stability in ambient air with a relative humidity of 45% for 7 days after device fabrication. Our approach of creating a high‐ k oxide/low‐ k organic bilayer dielectric is advantageous over single‐layer high‐ k dielectrics for top‐gate p‐channel WSe 2 FETs, which will lead the way toward future electronic nanodevices and their integration.