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Large‐Scale Growth of Two‐Dimensional SnS 2 Crystals Driven by Screw Dislocations and Application to Photodetectors
Author(s) -
Xia Jing,
Zhu Dandan,
Wang Lei,
Huang Ben,
Huang Xing,
Meng XiangMin
Publication year - 2015
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201501495
Subject(s) - materials science , photodetector , dislocation , hillock , optoelectronics , spiral (railway) , optics , nanotechnology , composite material , mathematical analysis , mathematics , physics
2D SnS 2 crystals are attracting increasing attention owning to the huge potential for electronic and optoelectronic applications. However, batch production of 2D SnS 2 crystals via a simple vapor process remains challenging by far. Moreover, the growth mechanism for vapor growth of 2D SnS 2 is not well documented as well. Herein, a simple approach is presented for preparation of large‐scale 2D SnS 2 crystals on mica sheets and it is demonstrated that these 2D crystals follow a screw‐dislocation‐driven (SDD) spiral growth process. The synthesized 2D crystals show hexagonal and truncated triangular shapes with the lateral size ranging from a few micrometers to dozens of micrometers. Observations of key features for screw dislocations, such as helical fringes, dislocation hillocks, and herringbone contours, solidly confirm the SDD spiral growth behavior of the SnS 2 . Possible mechanism is proposed in this work to show the generation and propagation of screw dislocations. Furthermore, in order to explore the optoelectronic property of the SnS 2 , photodetectors based on 2D SnS 2 crystals are fabricated. The resulting device shows excellent operating characteristics, including good photo‐stability and reproducibility as well as a fast photoresponse time (≈42 ms), which enable the SnS 2 a promising candidate for photodetectors.