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Configurable Resistive Switching between Memory and Threshold Characteristics for Protein‐Based Devices
Author(s) -
Wang Hong,
Du Yuanmin,
Li Yingtao,
Zhu Bowen,
Leow Wan Ru,
Li Yuangang,
Pan Jisheng,
Wu Tao,
Chen Xiaodong
Publication year - 2015
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201501389
Subject(s) - biocompatible material , electronics , materials science , resistive random access memory , resistive touchscreen , silk , nanotechnology , process (computing) , non volatile memory , computer science , optoelectronics , electrical engineering , biomedical engineering , engineering , voltage , composite material , computer vision , operating system
The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials.