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Enhanced Performance of Self‐Assembled Monolayer Field‐Effect Transistors with Top‐Contact Geometry through Molecular Tailoring, Heated Assembly, and Thermal Annealing
Author(s) -
Cernetic Nathan,
Weidner Tobias,
Baio Joe E.,
Lu Hao,
Ma Hong,
Jen Alex K.Y.
Publication year - 2015
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201501263
Subject(s) - materials science , monolayer , self assembly , annealing (glass) , contact geometry , thermal , nanotechnology , self assembled monolayer , geometry , composite material , thermodynamics , mathematics , physics
Low‐voltage self‐assembled monolayer field‐effect transistors (SAMFETs) that operate under an applied bias of less than −3 V and a high hole mobility of 10 −2 cm 2 V −1 s −1 are reported. A self‐assembled monolayer (SAM) with a quaterthiophene semiconducting core and a phosphonic acid binding group is used to fabricate SAMFETs on both high‐voltage (AlO x /300 nm SiO 2 ) and low‐voltage (HfO 2 ) dielectric platforms. High performance is achieved through enhanced SAM packing density via a heated assembly process and through improved electrical contact between SAM semiconductor and metal electrodes. Enhanced electrical contact is obtained by utilizing a functional methylthio head group combined with thermal annealing post gold source/drain electrode deposition to facilitate the interaction between SAM and electrode.