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ReS 2 ‐Based Field‐Effect Transistors and Photodetectors
Author(s) -
Zhang Enze,
Jin Yibo,
Yuan Xiang,
Wang Weiyi,
Zhang Cheng,
Tang Lei,
Liu Shanshan,
Zhou Peng,
Hu Weida,
Xiu Faxian
Publication year - 2015
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201500969
Subject(s) - photodetector , materials science , optoelectronics , graphene , transistor , fabrication , dielectric , field effect transistor , quantum efficiency , electronics , nanotechnology , electrical engineering , voltage , engineering , medicine , alternative medicine , pathology
Atomically thin 2D layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, the fabrication of ReS 2 field‐effect transistors is reported via the encapsulation of ReS 2 nanosheets in a high‐ κ Al 2 O 3 dielectric environment. Low‐temperature transport measurements allow to observe a direct metal‐to‐insulator transition originating from strong electron–electron interactions. Remarkably, the photodetectors based on ReS 2 exhibit gate‐tunable photoresponsivity up to 16.14 A W −1 and external quantum efficiency reaching 3168%, showing a competitive device performance to those reported in graphene, MoSe 2 , GaS, and GaSe‐based photodetectors. This study unambiguously distinguishes ReS 2 as a new candidate for future applications in electronics and optoelectronics.