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Resistive Switching in Mott Insulators and Correlated Systems
Author(s) -
Janod Etienne,
Tranchant Julien,
Corraze Benoit,
Querré Madec,
Stoliar Pablo,
Rozenberg Marcelo,
Cren Tristan,
Roditchev Dimitri,
Phuoc Vinh Ta,
Besland MariePaule,
Cario Laurent
Publication year - 2015
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201500823
Subject(s) - resistive random access memory , joule heating , mott insulator , materials science , resistive touchscreen , metal–insulator transition , condensed matter physics , doping , insulator (electricity) , electrical conductor , optoelectronics , electric field , nanotechnology , electrode , metal , electrical engineering , physics , composite material , engineering , metallurgy , quantum mechanics
Resistive random access memories (ReRAM) form an emerging type of non‐volatile memories, based on an electrically driven resistive switching (RS) of an active material. This Feature Article focuses on a broad class of ReRAM where the active material is a Mott insulator or a correlated system. These materials can indeed undergo various insulator‐to‐metal transitions (IMT) in response to external perturbations such as electronic doping or temperature. These IMT explain most of resistive switching observed in correlated insulators as, for example, the Joule heating induced RS in VO 2 . The main part of this Feature Article is dedicated to a new mechanism of resistive switching recently unveiled in canonical Mott insulators such as (V 1‐ x Cr x ) 2 O 3 , NiS 2‐ x Se x and AM 4 Q 8 (A = Ga, Ge; M = V, Nb, Ta, Mo; Q = S, Se, Te). In these narrow gap Mott insulators, an electronic avalanche breakdown induces a resistive switching, first volatile above a threshold electric field of a few kV/cm and then non‐volatile at higher field. The low resistance state is related to the creation of granular conductive filaments, which, in the non‐volatile case, can be erased by means of Joule heating. ReRAM devices based on this new type of out of equilibrium Mott insulator‐to‐metal transition display promising performances.