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MoS 2 /Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High‐Detectivity, Self‐Driven Visible–Near Infrared Photodetectors
Author(s) -
Wang Liu,
Jie Jiansheng,
Shao Zhibin,
Zhang Qing,
Zhang Xiaohong,
Wang Yuming,
Sun Zheng,
Lee ShuitTong
Publication year - 2015
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201500216
Subject(s) - photodetector , materials science , heterojunction , optoelectronics , molybdenum disulfide , substrate (aquarium) , infrared , ultrashort pulse , visible spectrum , specific detectivity , absorption (acoustics) , monolayer , silicon , optics , nanotechnology , responsivity , laser , oceanography , physics , metallurgy , composite material , geology
As an interesting layered material, molybdenum disulfide (MoS 2 ) has been extensively studied in recent years due to its exciting properties. However, the applications of MoS 2 in optoelectronic devices are impeded by the lack of high‐quality p–n junction, low light absorption for mono‐/multilayers, and the difficulty for large‐scale monolayer growth. Here, it is demonstrated that MoS 2 films with vertically standing layered structure can be deposited on silicon substrate with a scalable sputtering method, forming the heterojunction‐type photodetectors. Molecular layers of the MoS 2 films are perpendicular to the substrate, offering high‐speed paths for the separation and transportation of photo‐generated carriers. Owing to the strong light absorption of the relatively thick MoS 2 film and the unique vertically standing layered structure, MoS 2 /Si heterojunction photodetectors with unprecedented performance are actualized. The self‐driven MoS 2 /Si heterojunction photodetector is sensitive to a broadband wavelength from visible light to near‐infrared light, showing an extremely high detectivity up to ≈10 13 Jones (Jones = cm Hz 1/2 W −1 ), and an ultrafast response speed of ≈3 μs. The performance is significantly better than the photodetectors based on mono‐/multilayer MoS 2 nanosheets. Additionally, the MoS 2 /Si photodetectors exhibit excellent stability in air for a month. This work unveils the great potential of MoS 2 /Si heterojunction for optoelectronic applications.